Impact of radiation and electron trapping on minority carrier transport in <i>p</i>-Ga₂O₃

Highly resistive undoped p-type gallium oxide samples were subjected to cumulative proton irradiation with energies ranging from 25 70 keV and doses in the 1.6 × 10 14 –3.6 cm ?2 range. Proton resulted up a factor of 2 reduction minority electron diffusion length for temperatures between ? 300 400 K. Electron injection into under test using scanning microscope beam leads pronounced elongation beyond pre-irradiation values, thus demonstrating stable (days after injection) recovery adverse radiation impact on carrier transport. The activation energy 91 meV estimated temperature dependent vs duration experiments is likely related local potential barrier height native defects associated phenomenon interest.